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Simulation of the reverse I–V characteristics of the Schottky barrier radiation detector structures prepared on semi-insulating GaAs

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Bibliographic Details
Published in:Semiconductor science and technology 2007-07, Vol.22 (7), p.763-768
Main Authors: BOHACEK, P, DUBECKY, F, SEKACOVA, M
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/22/7/015