Loading…
Simulation of the reverse I–V characteristics of the Schottky barrier radiation detector structures prepared on semi-insulating GaAs
Saved in:
Published in: | Semiconductor science and technology 2007-07, Vol.22 (7), p.763-768 |
---|---|
Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | |
---|---|
ISSN: | 0268-1242 1361-6641 |
DOI: | 10.1088/0268-1242/22/7/015 |