Realization of As-doped p-type ZnO thin films using sputter deposition

• Published in: Semiconductor science and technology 2009-10, Vol.24 (10), p.105003-105003 (4)
• Main Authors: Choi, Hyung-Kyu, Park, Jang-Ho, Jeong, Sang-Hun, Lee, Byung-Teak
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Ii-vi semiconductors; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Physics
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/0268-1242/24/10/105003

Arsenic-doped p-type ZnO (p-ZnO:As) thin films were deposited by the magnetron sputtering technique. High-resolution low-temperature photoluminescence (PL) spectra of the films revealed emissions at 3.35 eV and 3.32 eV, representing the neutral-acceptor-bound exciton transition and the free electron to acceptor level transition. Electroluminescence spectra of the p-n diodes fabricated from the p-ZnO:As/n-GaN heterostructure showed UV emission at about 380 nm and yellowish visible lights centered at 600-650 nm, which resembled the PL spectrum of the ZnO:As layer. The p-type ZnO films with 1at% As grown at 500 deg C showed a hole concentration of 5 X 1012-7 X 1013 cm-3 after the deposition and 4 X 1014-1 X 1016 cm-3 after annealing at 600 deg C in oxygen atmosphere. High-resolution x-ray photoelectron spectroscopy indicated that most of the As dopants occupy Zn sites within the ZnO:As films.