Donor doping of HgCdTe for LWIR and MWIR structures fabricated with ion milling

Ion milling was used to establish the minimum donor doping level Nmd required for obtaining n-regions with reproducible electron concentration in HgCdTe-based LWIR and MWIR device structures fabricated with ion treatment. The experiments were performed on n-type films grown by molecular beam epitaxy...

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Bibliographic Details
Published in:Semiconductor science and technology 2009-02, Vol.24 (2), p.025031-025031 (4)
Main Authors: Pociask, M, Izhnin, I I, Izhnin, A I, Dvoretsky, S A, Mikhailov, N N, Sidorov, Yu G, Varavin, V S, Mynbaev, K D
Format: Article
Language:English
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Summary:Ion milling was used to establish the minimum donor doping level Nmd required for obtaining n-regions with reproducible electron concentration in HgCdTe-based LWIR and MWIR device structures fabricated with ion treatment. The experiments were performed on n-type films grown by molecular beam epitaxy, un-doped and in situ doped with indium with the concentration NIn = 5 X 1014-1017 cm-3. A study of the electrical properties of the milled films showed that Nmd comprised ~2 X 1015 cm-3 for the LWIR and ~5 X 1015 cm-3 for the MWIR films. In the films with NIn exceeding these critical values, the electron concentration after the milling strictly followed the doping. A need for consideration of the disintegration of the milling-induced defects is also shown.
ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/24/2/025031