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Voltage-controlled oscillator phase-noise improvement using a GaAs 0.5 µm Pt-buried gate enhancement-mode pHEMT

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Bibliographic Details
Published in:	Semiconductor science and technology 2009-09, Vol.24 (9), p.095003
Main Authors:	Chiu, Hsien-Chin, Ke, Po-Yu, Kuo, Che-Yu, Fu, Jeffrey S, Yang, Chih-Wei, Chien, Feng-Tso
Format:	Article
Language:	English
Citations:	Items that this one cites
Online Access:	Get full text
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