Study on quaternary AlInGaN/GaN HFETs grown on sapphire substrates

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Bibliographic Details
Published in:Semiconductor science and technology 2010-07, Vol.25 (7), p.075013
Main Authors: Ketteniss, N, Khoshroo, L Rahimzadeh, Eickelkamp, M, Heuken, M, Kalisch, H, Jansen, R H, Vescan, A
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Interfaces
Materials
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/25/7/075013