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Studies on device properties of an n-AgIn5Se8/p-Si heterojunction diode

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Bibliographic Details
Published in:Semiconductor science and technology 2011-10, Vol.26 (10), p.105013
Main Authors: Kaleli, M, Parlak, M, Erçelebi, Ç
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/26/10/105013