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Sub-band energies of highly strained InGaAs-GaAs quantum wells

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Bibliographic Details
Published in:Semiconductor science and technology 1988-06, Vol.3 (6), p.597-600
Main Authors: Mace, D A H, Rogers, D C, Monserrat, K J, Tothill, J N, Davey, S T
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/3/6/015