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Epilayer and interface defects associated with relaxation of SiGe on Si studied by slow positron implantation

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Bibliographic Details
Published in:	Semiconductor science and technology 1989-09, Vol.4 (9), p.815-818
Main Authors:	Baker, J A, Coleman, P G, Wakefield, B, Gibbings, C J, Tuppen, C G
Format:	Article
Language:	English
Subjects:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other interactions of matter with particles and radiation Physics Positron annihilation
Citations:	Items that this one cites Items that cite this one
Online Access:	Get full text
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