Transient photoluminescence in GaInAs/InP multiple quantum wells

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Bibliographic Details
Published in:Semiconductor science and technology 1993-09, Vol.8 (9), p.1758-1763
Main Authors: Bishop, P J, Daniels, M E, Ridley, B K, Hopkinson, M
Format: Article
Language:English
Subjects:
Charge carriers: generation, recombination, lifetime, and trapping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Photoluminescence
Physics
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/8/9/016