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Theoretical and isotopic infrared absorption investigations of nitrogen-oxygen defects in silicon

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Bibliographic Details
Published in:Semiconductor science and technology 1994-11, Vol.9 (11), p.2145-2148
Main Authors: Jones, R, Ewels, C, Goss, J, Miro, J, Deak, P, Oberg, S, Rasmussen, F B
Format: Article
Language:English
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/9/11/019