Thin-film ferroelectric microwave devices

When an electric field is applied to a ferroelectric material, the microwave permittivity undergoes a substantial change. This change in permittivity can be utilized in microwave devices to produce frequency-agile functions. This paper is a comprehensive review of the work on ferroelectric materials...

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Bibliographic Details
Published in:Superconductor science & technology 1998-11, Vol.11 (11), p.1323-1334
Main Authors: Lancaster, M J, Powell, J, Porch, A
Format: Article
Language:English
Subjects:
Applied sciences
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
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Summary:When an electric field is applied to a ferroelectric material, the microwave permittivity undergoes a substantial change. This change in permittivity can be utilized in microwave devices to produce frequency-agile functions. This paper is a comprehensive review of the work on ferroelectric materials; this includes models of the ferroelectric permittivity and loss tangent, as well as methods of measurement of these properties. New measurements are presented on thin-film strontium titanate and single-crystal strontium barium titanate substrates. These results are compared with the model. A brief discussion is given of the applications of ferroelectric material in microwave devices.
ISSN:0953-2048
1361-6668
DOI:10.1088/0953-2048/11/11/021