Annealing properties of ZnO films grown using diethyl zinc and tertiary butanol

• Published in: Journal of physics. Condensed matter 2005-03, Vol.17 (10), p.1719-1724
• Main Authors: Wang, J Z, Peres, M, Soares, J, Gorochov, O, Barradas, N P, Alves, E, Lewis, J E, Fortunato, E, Neves, A, Monteiro, T
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Lattice dynamics; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of specific thin films; Other semiconductors; Phonons in low-dimensional structures and small particles; Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0953-8984; 1361-648X
• DOI: 10.1088/0953-8984/17/10/026

ZnO films were grown by atmospheric metalorganic chemical vapour deposition and annealed at 900 DGC in an oxygen environment. The annealing properties of the films have been characterized by means of x-ray diffraction, Raman scattering, Rutherford backscattering (RBS), elastic recoil detection analysis (ERDA) and photoluminescence spectra. The results indicate that high crystal quality ZnO film has been obtained after annealing. The full width at half-maximum of w rocking curves is only 369 arcsec. The Raman spectra show a strong high frequency E2 mode peak comparable to that for bulk ZnO. The intensity ratio of the El (LO) peak to E2 ghpeak before annealing is 0.81 and after annealing 0.75. RBS and ERDA spectra indicate that a stoichiometric ZnO film is formed and the annealing only changes the H content in the ZnO film. After annealing all emission lines become sharper, as expected, which means a higher quality film has been obtained.