On the properties of surface reconstructed silicon nanowires

We study by means of density-functional calculations the role of lateral surface reconstructions in determining the electrical properties of silicon nanowires. The different lateral reconstructions are explored by relaxing all the nanowires with crystalline bulk silicon structure and all possible id...

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Bibliographic Details
Published in:Nanotechnology 2005-05, Vol.16 (5), p.S250-S253
Main Authors: Rurali, R, Lorente, N
Format: Article
Language:English
Subjects:
Condensed Matter
Materials Science
Mesoscopic Systems and Quantum Hall Effect
Physics
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Summary:We study by means of density-functional calculations the role of lateral surface reconstructions in determining the electrical properties of silicon nanowires. The different lateral reconstructions are explored by relaxing all the nanowires with crystalline bulk silicon structure and all possible ideal facets that correspond to an average diameter of 1.5 nm. We show that the reconstruction induces the formation of ubiquitous surface states that turn the wires into semi-metallic or metallic.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/16/5/021