Geometry transformation and alterations of periodically patterned Si nanotemplates by dry oxidation

We report on the size-dependent transformation and geometrical modifications of periodically patterned Si templates by a combination of dry oxidation and chemical etching. Deep ultraviolet lithography patterned circular holes with diameters varying between 190 nm and 1 microm on Si wafers were oxidi...

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Bibliographic Details
Published in:Nanotechnology 2009-01, Vol.20 (1), p.015303-015303 (5)
Main Authors: Park, Jeongwon, Chen, Li-Han, Hong, Daehoon, Choi, Chulmin, Loya, Mariana, Brammer, Karla, Bandaru, Prab, Jin, Sungho
Format: Article
Language:English
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Summary:We report on the size-dependent transformation and geometrical modifications of periodically patterned Si templates by a combination of dry oxidation and chemical etching. Deep ultraviolet lithography patterned circular holes with diameters varying between 190 nm and 1 microm on Si wafers were oxidized at 1000 degrees C using dry oxygen for various durations, with selected samples chemically etched for oxide removal for additional alterations. An interesting phenomenon of a circular-to-square shape transformation of the holes was observed, which was particularly pronounced in the sub-200 nm regime. We tentatively attribute the change to the surface energy and geometry constraints in nanoscale patterns.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/20/1/015303