Electrical conduction mechanisms in natively doped ZnO nanowires (II)

We have measured the intrinsic electrical resistivities, rho(T), of three individual single-crystalline ZnO nanowires (NWs) from 320 down to 1.3 K. The NWs were synthesized via carbon thermal chemical vapor deposition and the four-probe Pt contacting electrodes were made by the focused-ion-beam tech...

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Bibliographic Details
Published in:Nanotechnology 2010-04, Vol.21 (14), p.145202-145202
Main Authors: Tsai, Lin-Tzung, Chiu, Shao-Pin, Lu, Jia Grace, Lin, Juhn-Jong
Format: Article
Language:English
Subjects:
Activation analysis
Carbon
Charge transport
Electrical conduction
Electrodes
Electron beam lithography
Nanotechnology
Nanowires
Zinc oxide
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Summary:We have measured the intrinsic electrical resistivities, rho(T), of three individual single-crystalline ZnO nanowires (NWs) from 320 down to 1.3 K. The NWs were synthesized via carbon thermal chemical vapor deposition and the four-probe Pt contacting electrodes were made by the focused-ion-beam technique. Analysis of the overall temperature behavior of rho(T) confirms that the charge transport processes in natively doped ZnO NWs are due to a combination of the thermal activation conduction and the nearest-neighbor hopping conduction processes, as proposed and explained in a recent work (Chiu et al 2009 Nanotechnology 20 015203) where the ZnO NWs were grown by a different thermal evaporation method and the four-probe electrodes were made by the electron-beam lithography technique. Taken together, the observations of these two complementary studies firmly establish that the electrical conduction mechanisms in natively doped ZnO NWs are unique and now satisfactorily understood.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/21/14/145202