Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment

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Bibliographic Details
Published in:Chinese physics (Beijing, China) China), 2007-02, Vol.16, p.529
Main Authors: Jing-Ping, Xu, Wei-Bing, Chen, Pui-To, Lai, Yan-Ping, Li, Chu-Lok, Chan
Format: Article
Language:English
Online Access:Get full text
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ISSN:1009-1963
DOI:10.1088/1009-1963/16/2/040