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High power and high reliability GaN/InGaN flip-chip light-emitting diodes
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Published in: | Chinese physics (Beijing, China) China), 2007-04, Vol.16 (4), p.1135-1139 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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ISSN: | 1009-1963 1741-4199 |
DOI: | 10.1088/1009-1963/16/4/046 |