High-electric-field-stress-induced degradation of SiN passivated AlGaN/GaN high electron mobility transistors

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Bibliographic Details
Published in:Chinese physics B 2009-04, Vol.18 (4), p.1601-1608
Main Authors: Wen-Ping, Gu, Huan-Tao, Duan, Jin-Yu, Ni, Yue, Hao, Jin-Cheng, Zhang, Qian, Feng, Xiao-Hua, Ma
Format: Article
Language:English
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/18/4/052