Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode

The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current d...

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Bibliographic Details
Published in:Chinese physics B 2011-11, Vol.20 (11), p.446-450, Article 117301
Main Author: 陈丰平 张玉明 张义门 汤晓燕 王悦湖 陈文豪
Format: Article
Language:English
Subjects:
Barriers
Density
Diodes
Electric potential
Guards
Leakage current
SiC
Tradeoffs
Voltage
制造
势垒高度
反向恢复
开启电压
漏电流密度
稳定运行
肖特基二极管
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Summary:The 4H-SiC junction barrier Schottky （JBS） diodes terminated by field guard rings and offset field plate are designed, fabricated and characterized. It is shown experimentally that a 3-μm P-type implantation window spacing gives an optimum trade-off between forward drop voltage and leakage current density for these diodes, yielding a specific on-resistance of 8.3 mΩ-cm2. A JBS diode with a turn-on voltage of 0.65 V and a reverse current density less than 1 A/cm2 under 500 V is fabricated, and the reverse recovery time is tested to be 80 ns, and the peak reverse current is 28.1 mA. Temperature-dependent characteristics are also studied in a temperature range of 75 °C-200 °C. The diode shows a stable Schottky barrier height of up to 200°C and a stable operation under a continuous forward current of 100 A/cm2.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/11/117301