High-temperature characteristics of AlxGa1-xN/GaN Schottky diodes

High-temperature characteristics of the metal/AlxGa1-xN/GaN M/S/S （M/S/S） diodes have been studied with current-voltage （I-V） and capacitance-voltage （C-V） measurements at high temperatures. Due to the presence of the piezoelectric polarization field and a quantum well at the AlxGa1-xN/GaN interface...

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Bibliographic Details
Published in:Journal of semiconductors 2009-03, Vol.30 (3), p.39-45
Main Author: 张小玲 李菲 吕长志 谢雪松 李英 Mohammad S N
Format: Article
Language:English
Subjects:
压电极化
反向击穿电压
反向漏电流
显示性能
温度特性
电容电压
电流电压
肖特基二极管
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Summary:High-temperature characteristics of the metal/AlxGa1-xN/GaN M/S/S （M/S/S） diodes have been studied with current-voltage （I-V） and capacitance-voltage （C-V） measurements at high temperatures. Due to the presence of the piezoelectric polarization field and a quantum well at the AlxGa1-xN/GaN interface, the AlxGal-xN/GaN diodes show properties distinctly different from those of the AlxGa1-xN diodes. For the AlxGa1-xN/GaN diodes, an increase in temperature accompanies an increase in barrier height and a decrease in ideality factor, while the AlxGa1-xN diodes are opposite. Furthermore, at room temperature, both reverse leakage current and reverse breakdown voltage are superior for the AlxGa1-xN/GaN diodes to those for the AlxGa1-xN diodes.
ISSN:1674-4926
DOI:10.1088/1674-4926/30/3/034001