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Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask
This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes(LEDs) by using self-assembly metal layer nanomasks and inductively coupled plasma.Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nan...
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Published in: | Journal of semiconductors 2010-06, Vol.31 (6), p.57-59 |
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Main Author: | |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This paper reports a new method of fabricating AlGaInP-based nanorod light emitting diodes(LEDs) by using self-assembly metal layer nanomasks and inductively coupled plasma.Light-power measurements indicate that the scattering of photons considerably enhances the probability of escaping from the nanorod LEDs.The light-intensity of the nanorod LED is increased by 34%for a thin GaP window layer,and by 17%for an 8μm GaP window layer.The light-power of the nanorod LED is increased by 25%and 13%,respectively. |
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ISSN: | 1674-4926 |
DOI: | 10.1088/1674-4926/31/6/064008 |