Epitaxial growth of Gd2-xCexCuO4 thin films

We have grown (001)-oriented thin films of Gd2-xCexCuO4with cerium composition 0 < x < 0.2 by state-of-the-art reactive molecular beam epitaxy and characterized them by x-ray diffraction and transport measurements. A systematical change in the c-axis length upon cerium doping indicates that si...

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Bibliographic Details
Main Authors: Krockenberger, Y, Kurian, J, Naito, M, Alff, L
Format: Conference Proceeding
Language:English
Subjects:
Cerium
Doping
Electron diffraction
Epitaxial growth
High energy electrons
Molecular beam epitaxy
Phase diagrams
Phase stability
Physics
Room temperature
Strontium titanates
Substrates
Superconductivity
Thin films
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Summary:We have grown (001)-oriented thin films of Gd2-xCexCuO4with cerium composition 0 < x < 0.2 by state-of-the-art reactive molecular beam epitaxy and characterized them by x-ray diffraction and transport measurements. A systematical change in the c-axis length upon cerium doping indicates that single-phase films were obtained for the whole doping range. Based on a log po2 - 1/T phase diagram in combination with reflection high energy electron diffraction (RHEED), phase stability has been determined in order to achieve optimized reduction conditions. Gd2-xCexCuO4 thin films even after controlled reductions treatment did not show superconductivity in the whole range of Ce concentration studied. However, the room temperature resistivity of optimally reduced Gd2-xCexCuO4 thin films shows a minimum at around xCe 0.16. Our results on the growth and characterization of Gd2-xCexCuO4 thin films on (100) SrTiO3 substrates are described in detail.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/108/1/012041