Magnetism in wide band gap semiconductors implanted with non-magnetic ions

Single crystals of ZnO, TiO2 and LaAlO3 have been implanted with Ar with 100 keV and different fluencies. The Ar implanted crystals showed a week ferromagnetic-like signal between 10 K and 400 K. Hysteresis curves obtained at room temperature allowed confirming the ferromagnetic behaviour of the imp...

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Bibliographic Details
Published in:Journal of physics. Conference series 2009-03, Vol.153 (1), p.012044
Main Authors: Borges, R P, Cruz, M M, Silva, R C da, Bern, F, Venezuela, P, Moreira, M Dionízio, Costa, A T, Godinho, M
Format: Article
Language:English
Subjects:
Crystals
Ferromagnetism
First principles
Interstitials
Magnetic moments
Magnetic semiconductors
Physics
Room temperature
Single crystals
Titanium dioxide
Vacancies
Wide bandgap semiconductors
Zinc oxide
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Summary:Single crystals of ZnO, TiO2 and LaAlO3 have been implanted with Ar with 100 keV and different fluencies. The Ar implanted crystals showed a week ferromagnetic-like signal between 10 K and 400 K. Hysteresis curves obtained at room temperature allowed confirming the ferromagnetic behaviour of the implanted samples. Spin polarised first principles density functional calculations were performed in the case of ZnO considering Zn interstitials and O vacancies. No net magnetic polarisation was found for O vacancies, but in the case of Zn vacancies a magnetic moment of 1μB was obtained.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/153/1/012044