Effect of electrochemical etching solution composition on properties of porous SiC film

Porous amorphous SiC (a-SiC) layer with pore size in the nanometer region was fabricated on the a-SiC/Si substrates by the electrochemical etching method using HF/H2O/surfactant solution. Systematic study showed that the HF concentration in the etching solution (in the 1–73% region) strongly affects...

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Bibliographic Details
Published in:Journal of physics. Conference series 2009-09, Vol.187 (1), p.012023
Main Authors: Cao, Dao Tran, Anh, Cao Tuan, Ha, Nguyen Thi Thu, Ha, Huynh Thi, Huy, Bui, Hoa, Pham Thi Mai, Duong, Pham Hong, Ngan, Nguyen Thi Thanh, Dai, Ngo Xuan
Format: Article
Language:English
Subjects:
Electrochemical etching
Etching
Photoluminescence
Physics
Pore size
Silicon substrates
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Summary:Porous amorphous SiC (a-SiC) layer with pore size in the nanometer region was fabricated on the a-SiC/Si substrates by the electrochemical etching method using HF/H2O/surfactant solution. Systematic study showed that the HF concentration in the etching solution (in the 1–73% region) strongly affects the structure (both the pore size and the pore density) of the porous a-SiC layer. It was also observed the changing of the photoluminescence properties of the porous a-SiC layer when its structure has been changed.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/187/1/012023