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Concentration Dependence of Afterglow Suppression in CsI:Tl,Sm

Combined radioluminescence, afterglow and thermoluminescence experiments on single-crystal samples of co-doped CsI:Tl,Sm suggest that deeper samarium electron traps scavenge electrons from shallower thallium traps and that electrons subsequently released by samarium recombine non-radiatively with ho...

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Bibliographic Details
Published in:Journal of physics. Conference series 2010-11, Vol.249 (1), p.012014, Article 012014
Main Authors: Kappers, L A, Bartram, R H, Hamilton, D S, Lempicki, A, Brecher, C, Gaysinskiy, V, Ovechkina, E E, Nagarkar, V V
Format: Article
Language:English
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Summary:Combined radioluminescence, afterglow and thermoluminescence experiments on single-crystal samples of co-doped CsI:Tl,Sm suggest that deeper samarium electron traps scavenge electrons from shallower thallium traps and that electrons subsequently released by samarium recombine non-radiatively with holes trapped as VKA(Tl+) centers, thus providing a mechanism for suppression of trapped-charge accumulation in repetitive applications. In the present investigation, experiments performed on two single-crystal samples of CsI:Tl,Sm with nominal concentrations of 0.11% Tl+ and of 0.2% and 0.05% Sm2+, respectively, support the inference that electrons tunnel freely between samarium ions and are trapped preferentially near VKA(Tl+) centers where non-radiative recombination is the rate-limiting step.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/249/1/012014