Magnetic and transport properties of CeT2Al10 (T = Fe, Ru, Os) under pressure

The results of electrical resistivity ρ measurements for CeT2Al10 (T Fe, Ru, Os) under pressure are reported. The abrupt increase was observed at T0 ~ 27 K for CeRu2Al10 and 29 K for CeOs2Al10 at ambient pressure. By applying pressure, T0 for CeRu2Al10 and CeOs2Al10 suddenly disappeared at 4 GPa and...

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Bibliographic Details
Published in:Journal of physics. Conference series 2011-01, Vol.273 (1), p.012038
Main Authors: Kawamura, Yukihiro, Ogane, Yuta, Nishioka, Takashi, Kato, Harukazu, Matsumura, Masahiro, Matsubayashi, Kazuyuki, Uwatoko, Yoshiya
Format: Article
Language:English
Subjects:
Ground state
Low temperature
Magnetic properties
Physics
Pressure dependence
Temperature dependence
Transport properties
Online Access:Get full text
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Summary:The results of electrical resistivity ρ measurements for CeT2Al10 (T Fe, Ru, Os) under pressure are reported. The abrupt increase was observed at T0 ~ 27 K for CeRu2Al10 and 29 K for CeOs2Al10 at ambient pressure. By applying pressure, T0 for CeRu2Al10 and CeOs2Al10 suddenly disappeared at 4 GPa and 2 GPa, respectively. Although the ground state of CeRu2Al10 is metal at ambient pressure, ρ at low temperatures increased and the ground state became semiconductor at 2 GPa. The increase in ρ suppressed above 3 GPa and the ground state became metal above 5 GPa. Magnetic contribution to CeRu2Al10 above 4 GPa shows maximum, which seems to be attributed to Kondo coherence. These systematical change in ρ(T) was also observed in CeFe2Al10 and CeOs2Al10. From the pressure dependence of the temperature of the maximum, we suggests that CeFe2Al10 and CeOs2Al10 is corresponding to 3.2 GPa and 1.3 GPa of CeRu2Al10.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/273/1/012038