RF skin-depth measurement of UIrGe in high magnetic fields

UIrGe crystallizes in the orthorhombic TiNiSi structure and it orders antiferromagnetically at low temperatures. Previous magnetoresistance and magnetization studies had revealed multiple metamagnetic transitions between ~ 12 T and ~ 19T. Our present studies show that RF skin depth measurement offer...

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Bibliographic Details
Published in:Journal of physics. Conference series 2011-01, Vol.273 (1), p.012154-4
Main Authors: Nasreen, Farzana, Kothapalli, Karunakar, Altarawneh, Moaz Mohammad, Nakotte, Heinz, Harrison, Neil, Brück, Ekkehard
Format: Article
Language:English
Subjects:
Antiferromagnetism
Crystallization
Depth measurement
Frequency shift
Low temperature
Magnetic fields
Magnetism
Magnetization
Magnetoresistance
Magnetoresistivity
Oscillators
Physics
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Summary:UIrGe crystallizes in the orthorhombic TiNiSi structure and it orders antiferromagnetically at low temperatures. Previous magnetoresistance and magnetization studies had revealed multiple metamagnetic transitions between ~ 12 T and ~ 19T. Our present studies show that RF skin depth measurement offers an alternative magnetotransport probe. A proximity detector oscillator (PDO) is used to perform the contactless RF skin-depth measurements of UIrGe in pulsed magnetic fields up to 47 T in temperature range 0.57–12 K. The frequency and amplitude shifts reflect the changes in both the real and imaginary components of the conductivity. Our results confirm that the measured frequency shifts can be related to the magnetoresistance effects.
ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/273/1/012154