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Susceptibility of local magnetic moments in phosphorous-doped silicon near the metal-insulator transition

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Bibliographic Details
Published in:Europhysics letters 1998-03, Vol.41 (5), p.584-584
Main Authors: Schlager, H. G, Löhneysen, H. v
Format: Article
Language:English
Online Access:Get full text
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ISSN:0295-5075
1286-4854
DOI:10.1209/epl/i1998-00196-9