Device-Quality $\beta$-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

N-type Ga 2 O 3 homoepitaxial thick films were grown on $\beta$-Ga 2 O 3 (010) substrates by ozone molecular beam epitaxy. The epitaxial growth rate was increased by more than ten times by changing from the (100) plane to the (010) plane. The carrier concentration of the epitaxial layers could be va...

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Bibliographic Details
Published in:Applied physics express 2012-03, Vol.5 (3), p.035502-035502-3
Main Authors: Sasaki, Kohei, Kuramata, Akito, Masui, Takekazu, Víllora, Encarnación G, Shimamura, Kiyoshi, Yamakoshi, Shigenobu
Format: Article
Language:English
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Summary:N-type Ga 2 O 3 homoepitaxial thick films were grown on $\beta$-Ga 2 O 3 (010) substrates by ozone molecular beam epitaxy. The epitaxial growth rate was increased by more than ten times by changing from the (100) plane to the (010) plane. The carrier concentration of the epitaxial layers could be varied within the range of $10^{16}$--$10^{19}$ cm -3 by changing the Sn doping concentration. Platinum Schottky barrier diodes (SBDs) on 1.4-μm-thick $\beta$-Ga 2 O 3 homoepitaxial layers were demonstrated for the first time. The SBDs exhibited a reverse breakdown voltage of 100 V, an on-resistance of 2 m$\Omega$ cm 2 , and a forward voltage of 1.7 V (at 200 A/cm 2 ).
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.5.035502