Epitaxial Growth and Electrical Properties of Thick SmSi2 Layers on (001) Silicon

We report on the growth of thick (up to 1.2 \mbox{$\mu$m}) epitaxial samarium disilicide layers on (001) oriented silicon substrates. The films have the bulk tetragonal SmSi 2 structure and composition, and grow with a preferential orientation SmSi 2 [100] $\parallel$ Si[110]. A surface reconstructi...

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Bibliographic Details
Published in:Jpn J Appl Phys 2010-02, Vol.49 (2), p.025505-025505-3
Main Authors: Natali, Franck, Plank, Natalie O. V, Ludbrook, Bart M, Richter, Jan, Minnee, Thom, Ruck, Ben J, Trodahl, H. Joe, Kennedy, John V, Hirsch, Lionel
Format: Article
Language:English
Online Access:Get full text
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Summary:We report on the growth of thick (up to 1.2 \mbox{$\mu$m}) epitaxial samarium disilicide layers on (001) oriented silicon substrates. The films have the bulk tetragonal SmSi 2 structure and composition, and grow with a preferential orientation SmSi 2 [100] $\parallel$ Si[110]. A surface reconstruction transition from ($1{\times}1$) to ($2{\times}2$) appears below ${\sim}525$ \mbox{ \circ C}. Transport measurements show an n-type metallic conduction with a room temperature resistivity of 175 \mbox{$\mu$}$\Omega$ cm decreasing to 85 \mbox{$\mu$}$\Omega$ cm at 4 K, and a carrier concentration of $1.3 \times 10^{22}$ cm -3 .
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.025505