Characterization of (Bi3.25Nd0.75)Ti3O12 Thin Films with $a$- and $b$-Axis Orientations Deposited on Nb:TiO2 Substrates by High-Temperature Sputtering

• Published in: Jpn J Appl Phys 2010-09, Vol.49 (9), p.09MA03-09MA03-5
• Main Authors: Kobune, Masafumi, Tamura, Akihiro, Oshima, Hisashi, Imagawa, Kazuki, Daiko, Yusuke, Mineshige, Atsushi, Yazawa, Tetsuo, Fujisawa, Hironori, Shimizu, Masaru, Yamaguchi, Hideshi, Honda, Koichiro
• Format: Article
• Language: English
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.49.09MA03

$a$- and $b$-axis-oriented (Bi 3.25 Nd 0.75 )Ti 3 O 12 (BNT-0.75) films, 3.0 \mbox{$\mu$m} thick, were fabricated on conductive Nb:TiO 2 (101) substrates with 0.001--0.79 mass % Nb at 650 \mbox{ \circ C} by high-temperature sputtering. All the films had a mostly single-phase orthorhombic structure and $a$- and $b$-axis orientations. The degree of $a$- and $b$-axis orientations was high, with values of ${\geq}96$%. BNT-0.75 films grown heteroepitaxially on Nb:TiO 2 (101) substrates containing 0.79 mass % Nb were comprised of nanoplate-like crystals and exhibited the best hysteresis loop shapes, with a remanent polarization ($2P_{\text{r}}$) of 29 \mbox{$\mu$}C/cm 2 and a coercive field ($2E_{\text{c}}$) of 297 kV/cm.