Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti

The effects of the reactive Ti layer on the resistive switching characteristics of TiN/Ti/TiO 2 /TiN resistive random access memory (ReRAM) are investigated. Nitridation at the top region of Ti during reactive sputtering of the TiN layer and oxygen gettering of Ti from TiO 2 make the TiON/TiO 2-x in...

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Bibliographic Details
Published in:Jpn J Appl Phys 2011-04, Vol.50 (4), p.04DD14-04DD14-4
Main Authors: Kim, Sook Joo, Sung, Min Gyu, Joo, Moon Sig, Kim, Wan Gee, Kim, Ja Yong, Yoo, Jong Hee, Kim, Jung Nam, Gyun, Byun Ggu, Byun, Jun Young, Roh, Jae Sung, Park, Sung Ki, Kim, Yong Soo
Format: Article
Language:English
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Summary:The effects of the reactive Ti layer on the resistive switching characteristics of TiN/Ti/TiO 2 /TiN resistive random access memory (ReRAM) are investigated. Nitridation at the top region of Ti during reactive sputtering of the TiN layer and oxygen gettering of Ti from TiO 2 make the TiON/TiO 2-x interface. It results in TiO 2 with a higher concentration of oxygen vacancies during metal alloy annealing, resulting in the low-initial-resistance state. This leads to a stable bipolar switching after the first set process. A larger thickness of Ti decreases resistance value in the high-resistance state, which enables the adjustment of on/off resistance ratio.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.50.04DD14