Fabrication of Ni/Al2O3/Ni Heteroepitaxial Junction by Post-Hydrogen Reduction of NiO/Al2O3/NiO Trilayered Epitaxial Thin Film

The fabrication of a Ni/Al 2 O 3 /Ni heteroepitaxial junction was achieved by the post-hydrogen reduction of a NiO/Al 2 O 3 /NiO trilayered epitaxial thin film grown by pulsed laser deposition. The top and bottom NiO layers were selectively reduced to Ni metal layers showing epitaxial relationships,...

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Bibliographic Details
Published in:Jpn J Appl Phys 2011-09, Vol.50 (9), p.098004-098004-2
Main Authors: Yamauchi, Ryosuke, Kobayashi, Keisuke, Hosaka, Makoto, Suzuki, Toshimasa, Koyama, Kohji, Matsuda, Akifumi, Arai, Hideki, Kato, Yushi, Mitsuhashi, Masahiko, Kaneko, Satoru, Yoshimoto, Mamoru
Format: Article
Language:English
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Summary:The fabrication of a Ni/Al 2 O 3 /Ni heteroepitaxial junction was achieved by the post-hydrogen reduction of a NiO/Al 2 O 3 /NiO trilayered epitaxial thin film grown by pulsed laser deposition. The top and bottom NiO layers were selectively reduced to Ni metal layers showing epitaxial relationships, while the Al 2 O 3 interlayer remained. The crystallographic and interfacial characteristics were confirmed by X-ray diffraction analysis, reflection high-energy electron diffraction, and transmission electron microscopy. The fabricated Ni/Al 2 O 3 /Ni heteroepitaxial junction exhibited atomically sharp interfaces with no amorphous boundary layer.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.50.098004