Si-Ion Implantation Doping in $\beta$-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts

We developed a donor doping technique for $\beta$-Ga 2 O 3 by using Si-ion (Si + ) implantation. For the implanted Ga 2 O 3 substrates with $\text{Si$^{+}$}=1\times 10^{19}{\mbox{--}}5\times 10^{19}$ cm -3 , a high activation efficiency of above 60% was obtained after annealing in a nitrogen gas atm...

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Bibliographic Details
Published in:Applied physics express 2013-08, Vol.6 (8), p.086502-086502-4
Main Authors: Sasaki, Kohei, Higashiwaki, Masataka, Kuramata, Akito, Masui, Takekazu, Yamakoshi, Shigenobu
Format: Article
Language:English
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Summary:We developed a donor doping technique for $\beta$-Ga 2 O 3 by using Si-ion (Si + ) implantation. For the implanted Ga 2 O 3 substrates with $\text{Si$^{+}$}=1\times 10^{19}{\mbox{--}}5\times 10^{19}$ cm -3 , a high activation efficiency of above 60% was obtained after annealing in a nitrogen gas atmosphere at a relatively low temperature of 900--1000 °C. Annealed Ti/Au electrodes fabricated on the implanted Ga 2 O 3 layers showed ohmic behavior. The Ga 2 O 3 with $\text{Si$^{+}$}=5\times 10^{19}$ cm -3 showed the lowest specific contact resistance and resistivity obtained in this work of $4.6\times 10^{-6}$ $\Omega$$\cdot$cm 2 and 1.4 m$\Omega$$\cdot$cm, respectively.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.6.086502