Effect of Oxygen Pressure on Electrical Properties of BiFe0.9Co0.1O3 Thin Films Prepared by Pulsed Laser Deposition

The crystal structures and electrical properties of epitaxial BiFe 0.9 Co 0.1 O 3 thin films grown by pulsed laser deposition on SrRuO 3 /SrTiO 3 (001) substrates under different oxygen pressures were investigated. The unit cell volume of BiFe 0.9 Co 0.1 O 3 thin films monotonically decreases with i...

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Bibliographic Details
Published in:Jpn J Appl Phys 2013-09, Vol.52 (9), p.09KD09-09KD09-3
Main Authors: Hojo, Hajime, Onuma, Ko, Ikuhara, Yuichi, Azuma, Masaki
Format: Article
Language:eng ; jpn
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Summary:The crystal structures and electrical properties of epitaxial BiFe 0.9 Co 0.1 O 3 thin films grown by pulsed laser deposition on SrRuO 3 /SrTiO 3 (001) substrates under different oxygen pressures were investigated. The unit cell volume of BiFe 0.9 Co 0.1 O 3 thin films monotonically decreases with increasing oxygen pressure from 10 to 17 Pa, while the leakage current is minimum at 15 Pa. Oxygen content variation in the BiFe 0.9 Co 0.1 O 3 thin films is proposed to explain the obtained experimental results. The BiFe 0.9 Co 0.1 O 3 thin film deposited at 15 Pa shows ferroelectric switching behavior with inversion current at room temperature.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.09KD09