Tb0.3Dy0.7Fe1.9/PbZr0.52Ti0.48O3 Micro-Bridge on SiNx Thin Film for Low Frequency Magnetic Sensing Applications

A micro-fabricated bridge sensor for determining minute magnetic field variation is proposed. A micro-bridge with $100\times 400$ μm 2 dimensions (width $\times$ length) comprises a multi-layered structure of Tb 0.3 Dy 0.7 Fe 1.9 /SiO 2 /Pt/PbZr 0.52 Ti 0.48 O 3 /Pt/Ta on a SiN x supporting layer. W...

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Bibliographic Details
Published in:Jpn J Appl Phys 2013-10, Vol.52 (10), p.10MC10-10MC10-4
Main Authors: Lee, Dong Gun, Han, Jun Hyun, Lee, Junwoo, Choi, Wook, Yoo, Yong Kyung, Kim, Jinseok, Hwang, Kyo Seon, Kim, Tae Song, Chun, Dong Won, Kim, Yu-Chan, Lee, Kyu Hyoung, Lee, Jeong Hoon
Format: Article
Language:eng ; jpn
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Summary:A micro-fabricated bridge sensor for determining minute magnetic field variation is proposed. A micro-bridge with $100\times 400$ μm 2 dimensions (width $\times$ length) comprises a multi-layered structure of Tb 0.3 Dy 0.7 Fe 1.9 /SiO 2 /Pt/PbZr 0.52 Ti 0.48 O 3 /Pt/Ta on a SiN x supporting layer. We observed the limit of detection under small DC magnetic field as $1\times 10^{-11}$ T which was converted electrically to 77 μV with a 5 μV noise floor via elastic coupling between magnetostrictive and piezoelectric thin film. The magnetoelectric (ME) voltage was linearly proportional to small magnetic field variance, and the experimental ME coefficient was measured as 9.9 V/(cm$\cdot$Oe).
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.10MC10