VDMOSFET reliability dependence on the integrated drainsource junction

Purpose This work aims to investigate the modifications in a transistor behavior after hot carrier injection processes from the integrated junction. Designmethodologyapproach A high voltage is applied across the drainsource contacts, so a reverse current is induced through the integrated junction an...

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Bibliographic Details
Published in:Microelectronics international 2009-01, Vol.26 (1), p.33-36
Main Authors: El Bitar, R., Habchi, R., Salame, C., Khoury, A., Mialhe, P., Nsouli, B.
Format: Article
Language:English
Subjects:
Integrated circuits
Product reliability
Online Access:Get full text
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Summary:Purpose This work aims to investigate the modifications in a transistor behavior after hot carrier injection processes from the integrated junction. Designmethodologyapproach A high voltage is applied across the drainsource contacts, so a reverse current is induced through the integrated junction and defects are then created. Findings The results point out to a dependence of the VDMOSFET reliability on the operating conditions which could induce parasitic effects on the structure. Induced defects alter the form of several MOSFET characteristics. Originalityvalue A new method of degradation is presented along with a series of characterization techniquesbased electrical parameters variations.
ISSN:1356-5362
DOI:10.1108/13565360910923142