A new concept for the use of Alsheet as integrated substrate for one or multichip module package

In this paper we present recent studies on the electrochemical migration processes in Ag thin film parallel microstrip lines in MCMD structures. The basic concept is applying accelerated local droptest of water solutions onto the surface of two adjacent lines, under a given voltage potential. These...

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Bibliographic Details
Published in:Microelectronics international 1998-12, Vol.15 (3), p.36-41
Main Authors: Philippov, Ph, Arnaudov, R., Yordanov, N., Gospodinova, M.
Format: Article
Language:English
Subjects:
Interconnection
Multichip module
Thin film
Online Access:Get full text
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Summary:In this paper we present recent studies on the electrochemical migration processes in Ag thin film parallel microstrip lines in MCMD structures. The basic concept is applying accelerated local droptest of water solutions onto the surface of two adjacent lines, under a given voltage potential. These operational conditions are often met in the interconnection line buses, placed in the top assembly level of multilayered hybrid structures. The subject of investigations are MCMD developed on Alsheet carrier with internal conducting and isolating layers, produced through unique selective electrochemical anodization of Al and Ta. This technology process also enables the creation of embedded R and C passive components on the base of TaOxN1x and Ta2O5 or Al2O3 respectively. We propose an electrochemical deposition of AgSb alloys on the surface of Al interconnection lines and contact pads to ease the bondability and solderability in chip mounting procedures. The artificially created silver migrated defects and partial shorts are investigated through the high frequency method of coupled transmission lines in order to eliminate the errors and insufficient validity of DC direct measurements.
ISSN:1356-5362
DOI:10.1108/13565369810233140