Optical and electronic structure of quasi-freestanding multilayer graphene on the carbon face of SiC

We report the optical and electronic properties of multilayer graphene films grown epitaxially on the carbon face (C-face) of 4H-SiC probed using spectroscopic ellipsometry (SE) and angle-resolved photoemission spectroscopy (ARPES). The optical conductivity in the energy range from 1.0 to 5.3 eV ext...

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Bibliographic Details
Published in:Europhysics letters 2014-11, Vol.108 (3), p.37009-p1-37009-p6
Main Authors: Santoso, Iman, Wong, Swee Liang, Yin, Xinmao, Gogoi, Pranjal Kumar, Asmara, Teguh Citra, Huang, Han, Chen, Wei, Wee, Andrew T. S., Rusydi, Andrivo
Format: Article
Language:English
Subjects:
07.60.Fs
73.22.Pr
78.67.Wj
Asymmetry
Carbon
Dispersions
Electronic properties
Electronic structure
Electronics
Epitaxial growth
Excitons
Graphene
Multilayers
Optical properties
Photoelectric emission
Silicon carbide
Spectroellipsometry
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Summary:We report the optical and electronic properties of multilayer graphene films grown epitaxially on the carbon face (C-face) of 4H-SiC probed using spectroscopic ellipsometry (SE) and angle-resolved photoemission spectroscopy (ARPES). The optical conductivity in the energy range from 1.0 to 5.3 eV extracted from SE reveals two important features: the presence of universal conductivity at the near-infrared region and asymmetric resonant excitons at 4.5 eV. Furthermore, ARPES shows the presence of independent linear electronic dispersion. These features resemble quasi-freestanding properties of multilayer graphene grown on the C-face of SiC.
ISSN:0295-5075
1286-4854
DOI:10.1209/0295-5075/108/37009