Magnetoresistance and Shubnikov-de Haas oscillation in YSb

YSb crystals are grown and the transport properties under magnetic field are measured. The resistivity exhibits metallic behavior under zero magnetic field and the low-temperature resistivity shows a clear upturn once a moderate magnetic field is applied. The upturn is greatly enhanced by increasing...

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Bibliographic Details
Published in:Europhysics letters 2017-07, Vol.119 (1), p.17002
Main Authors: Yu, Qiao-He, Wang, Yi-Yan, Lou, Rui, Guo, Peng-Jie, Xu, Sheng, Liu, Kai, Wang, Shancai, Xia, Tian-Long
Format: Article
Language:English
Subjects:
72.15.Eb
75.47.-m
Crystal growth
Electrical resistivity
First principles
Holes (electron deficiencies)
Low temperature
Magnetic fields
Magnetic properties
Magnetoresistance
Magnetoresistivity
Photoelectric emission
Transport properties
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Summary:YSb crystals are grown and the transport properties under magnetic field are measured. The resistivity exhibits metallic behavior under zero magnetic field and the low-temperature resistivity shows a clear upturn once a moderate magnetic field is applied. The upturn is greatly enhanced by increasing magnetic field. At low temperature (2.5 K) and high field (14 T), the transverse magnetoresistance (MR) is quite large . In addition, the Shubnikov-de Haas (SdH) oscillation has also been observed in YSb. The possible trivial Berry phase extracted from the SdH oscillation, the band structure revealed by angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations demonstrate that YSb is a topologically trivial material. The extremely large MR (XMR) in YSb may originate from the electron-hole compensation.
ISSN:0295-5075
1286-4854
DOI:10.1209/0295-5075/119/17002