Synthesis of CuInS2, CuInSe2, and Cu(In x Ga1-x )Se2 (CIGS) Nanocrystal “Inks” for Printable Photovoltaics

Chalcopyrite copper indium sulfide (CuInS2) and copper indium gallium selenide (Cu(In x Ga1-x )Se2; CIGS) nanocrystals ranging from ∼5 to ∼25 nm in diameter were synthesized by arrested precipitation in solution. The In/Ga ratio in the CIGS nanocrystals could be controlled by varying the In/Ga react...

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Bibliographic Details
Published in:Journal of the American Chemical Society 2008-12, Vol.130 (49), p.16770-16777
Main Authors: Panthani, Matthew G, Akhavan, Vahid, Goodfellow, Brian, Schmidtke, Johanna P, Dunn, Lawrence, Dodabalapur, Ananth, Barbara, Paul F, Korgel, Brian A
Format: Article
Language:English
Online Access:Get full text
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Summary:Chalcopyrite copper indium sulfide (CuInS2) and copper indium gallium selenide (Cu(In x Ga1-x )Se2; CIGS) nanocrystals ranging from ∼5 to ∼25 nm in diameter were synthesized by arrested precipitation in solution. The In/Ga ratio in the CIGS nanocrystals could be controlled by varying the In/Ga reactant ratio in the reaction, and the optical properties of the CuInS2 and CIGS nanocrystals correspond to those of the respective bulk materials. Using methods developed to produce uniform, crack-free micrometer-thick films, CuInSe2 nanocrystals were tested in prototype photovoltaic devices. As a proof-of-concept, the nanocrystal-based devices exhibited a reproducible photovoltaic response.
ISSN:0002-7863
1520-5126
DOI:10.1021/ja805845q