Role of different factors affecting interdiffusion in Cu(Ga) and Cu(Si) solid solutions

• Published in: Proceedings of the Royal Society. A, Mathematical, physical, and engineering sciences Mathematical, physical, and engineering sciences, 2014-01, Vol.470 (2161), p.20130464-20130464
• Main Authors: Santra, Sangeeta, Dong, Hongqun, Laurila, Tomi, Paul, Aloke
• Format: Article
• Language: English
• Subjects: Copper; Diffusion; Diffusion coefficient; Diffusion rate; Driving Force; Impurities; Indentation; Interdiffusion; Mathematical analysis; Solid Solution; Solid solutions; Vacancy Wind Effect
• ISSN: 1364-5021; 1471-2946
• DOI: 10.1098/rspa.2013.0464

A detailed diffusion study was carried out on Cu(Ga) and Cu(Si) solid solutions in order to assess the role of different factors in the behaviour of the diffusing components. The faster diffusing species in the two systems, interdiffusion, intrinsic and impurity diffusion coefficients, are determined to facilitate the discussion. It was found that Cu was more mobile in the Cu-Si system, whereas Ga was the faster diffusing species in the Cu-Ga system. In both systems, the interdiffusion coefficients increased with increasing amount of solute (e.g. Si or Ga) in the matrix (Cu). Impurity diffusion coefficients for Si and Ga in Cu, found out by extrapolating interdiffusion coefficient data to zero composition of the solute, were both higher than the Cu tracer diffusion coefficient. These observed trends in diffusion behaviour could be rationalized by considering: (i) formation energies and concentration of vacancies, (ii) elastic moduli (indicating bond strengths) of the elements and (iii) the interaction parameters and the related thermodynamic factors. In summary, we have shown here that all the factors introduced in this paper should be considered simultaneously to understand interdiffusion in solid solutions. Otherwise, some of the aspects may look unusual or even impossible to explain.