See-saw Type RF MEMS Switch with Narrow Gap Vertical Comb

This paper presents the see-saw type RF MEMS switch based on a single crystalline silicon structure with narrow gap vertical comb. Low actuation voltage and high isolation are key features to be solved in electrostatic RF MEMS switch design. Since these parameters in conventional parallel plate RF M...

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Bibliographic Details
Published in:Journal of semiconductor technology and science 2007, Vol.7 (3), p.177-182
Main Authors: Kang, Sung-Chan, Moon, Sung-Soo, Kim, Hyeon-Cheol, Chun, Kuk-Jin
Format: Article
Language:English
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Summary:This paper presents the see-saw type RF MEMS switch based on a single crystalline silicon structure with narrow gap vertical comb. Low actuation voltage and high isolation are key features to be solved in electrostatic RF MEMS switch design. Since these parameters in conventional parallel plate RF MEMS switch designs are in trade-off relationship, both requirements cannot be met simultaneously. In the vertical comb design, however, the actuation voltage is independent of the vertical separation distance between the contact electrodes. Therefore, the large separation gap between contact electrodes is implemented to achieve high isolation. We have designed and fabricated RF MEMS switch which has 46dB isolation at 5GHz, 0.9dB insertion loss at 5GHz and 40V actuation voltage.
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2007.7.3.177