Synthesis of Fluorinated Polymer Gate Dielectric with Improved Wetting Property and Its Application to Organic Field-Effect Transistors

• Published in: Macromolecular research 2009, Vol.17 (9), p.646-650
• Main Authors: Kim, Jae-Wook, Jung, Hee-Tae, Ha, Sun-Young, Yi, Mi-Hye, Park, Jae-Eun, Kim, Hyo-Joong, Choi, Young-Ill, Pyo, Seung-Moon
• Format: Article
• Language: Korean
• ISSN: 1598-5032; 2092-7673

We report the fabrication of pentacene organic field-effect transistors (OFETs) using a fluorinated styrene-alt-maleic anhydride copolymer gate dielectric, which was prepared from styrene derivatives with a fluorinated side chain [$-CH_2-O-(CH_2)_2-(CF_2)_5CF_3$] and maleic anhydride through a solution polymerization technique. The fluorinated side chain was used to impart hydrophobicity to the surface of the gate dielectric and maleic anhydride was employed to improve its wetting properties. A field-effect mobility of 0.12 cm$^2$/Vs was obtained from the as-prepared top-contact pentacene FETs. Since various functional groups can be introduced into the copolymer due to the nature of maleic anhydride, its physical properties can be manipulated easily. Using this type of copolymer, the performance of organic FETs can be enhanced through optimization of the interfacial properties between the gate dielectric and organic semiconductor.