Ambipolarity Factor of Tunneling Field-Effect Transistors (TFETs)

The ambipolar behavior of tunneling field-effect transistors (TFETs) has been investigated quantitatively by introducing a novel parameter: ambipolarity factor (${\nu}$). It has been found that the malfunction of TFET can result from the ambipolar state which is not on- or off- state. Therefore, the...

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Bibliographic Details
Published in:Journal of semiconductor technology and science 2011, Vol.11 (4), p.272-277
Main Authors: Jang, Jung-Shik, Choi, Woo-Young
Format: Article
Language:Korean
Online Access:Get full text
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Summary:The ambipolar behavior of tunneling field-effect transistors (TFETs) has been investigated quantitatively by introducing a novel parameter: ambipolarity factor (${\nu}$). It has been found that the malfunction of TFET can result from the ambipolar state which is not on- or off- state. Therefore, the effect of ambipolar behavior on the device performance should be parameterized quantitatively, and this has been successfully evaluated as a function of device structure, gate oxide thickness, supply voltage, drain doping concentration and body doping concentration by using ${\nu}$.
ISSN:1598-1657