Studying the operation of MOSFET RC-phase shift oscillator under different environmental conditions

• Published in: Nuclear engineering and technology 2020, Vol.52 (8), p.1764-1770
• Main Authors: Ibrahim, Reiham O, Abd El-Azeem, S.M, El-Ghanam, S.M, Soliman, F.A.S
• Format: Article
• Language: Korean
• ISSN: 1738-5733; 2234-358X

The present work was mainly concerned with studying the operation of RC-phase shift oscillator based on MOSFET type 2N6660 under the influence of different temperature levels ranging from room temperature (25 ℃) up-to135 ℃ and gamma-irradiation up-to 3.5 kGy. In this concern, both the static (I-V) characteristic curves of MOSFET devices and the output signal of the proposed oscillator were recorded under ascending levels of both temperature and gamma-irradiation. From which, it is clearly shown that the drain current was decreased from 0.22 A, measured at 25 ℃, down to 0.163 A, at 135 ℃. On the other hand, its value was increased up-to 0.49 A, whenever the device was exposed to gamma-rays dose of 3.5 kGy. Considering RC-phase shift oscillator, the oscillation frequency and output pk-pk voltage were decreased whenever MOSFET device exposed to gamma radiation by ratio 54.9 and 91%, respectively. While, whenever MOSFET device exposed to temperature the previously mentioned parameters were shown to be decreased by ratio 2.07 and 46.2%.