Recovery of Damage in Rad-Hard MOS Devices during and after Irradiation by Electrons, Protons, Alphas, and Gamma Rays

• Published in: IEEE transactions on nuclear science 1983-12, Vol.30 (6), p.4157-4161
• Main Authors: Brucker, G. J., Van Gunten, O., Stassinopoulos, E. G., Shapiro, P., August, L. S., Jordan, T. M.
• Format: Article
• Language: English
• Subjects: Electronics And Electrical Engineering; Electrons; Gamma rays; Large scale integration; MOS devices; Performance analysis; Physics computing; Protons; Radiation hardening; Testing; Threshold voltage
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.1983.4333100

This paper reports on the recovery properties of rad-hard MOS devices during and after irradiation by electrons, protons, alphas, and gamma rays. The results indicated that complex recovery properties controlled the damage sensitivities of the tested parts. The results also indicated that damage sensitivities depended on dose rate, total dose, supply bias, gate bias, transistor type, radiation source, and particle energy. The complex nature of these dependencies make interpretation of LSI device performance in space (exposure to entire electron and proton spectra) difficult, if not impossible, without respective ground tests and analyses. Complete recovery of n-channel shifts was observed, in some cases within hours after irradiation, with equilibrium values of threshold voltages greater than their pre-irradiation values. This effect depended on total dose, radiation source, and gate bias during exposure. In contrast, the p-channel shifts recovered only 20% within 30 days after irradiation.