Determination of the electrical conductivity of liquid Ge(0.95)Si(0.05)

We have measured the electrical conductivity of molten germanium-silicon Ge(0.95)Si(0.05) from the liquidus temperature (1050 C) up to 1220 C. The data were acquired with a unique apparatus which utilizes the standard four-probe technique. The basic unit consists of a fused silica enclosure that con...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 1995-01
Main Authors: Rolin, T. D., Szofran, F. R.
Format: Article
Language:English
Subjects:
Solid-State Physics
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have measured the electrical conductivity of molten germanium-silicon Ge(0.95)Si(0.05) from the liquidus temperature (1050 C) up to 1220 C. The data were acquired with a unique apparatus which utilizes the standard four-probe technique. The basic unit consists of a fused silica enclosure that contains hermetic glass-to-tungsten seals that can support vacuum pressures down to 10(exp -7) Torr. With calibration, the measurement error for the low vapor pressure materials of this study was typically less than 7%. The temperature dependence of the electrical conductivity of a Ge(0.95)Si(0.05) melt was found to vary from approximately 22,300/ohm/cm at the liquidus temperature down to approximately 16,000/ohm/cm at 1220 C. The negative temperature coefficient as well as the magnitude of these data clearly indicate that the molten material is metallic in nature despite the semiconducting properties of the solid.
ISSN:0022-0248