Dependence of photocurrent on UV wavelength in ZnO/Pt bottom-contact Schottky diode

We fabricated the bottom-contacted ZnO/Pt Schottky diode and investigated the dependence of its photocurrent on the wavelength of illuminated ultraviolet (UV) light source. The bottom-contacted Schottky diode was devised by growing (000l) ZnO on (111) Pt, and the fabricated device showed a strong de...

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Bibliographic Details
Published in:Current applied physics 2015, 15(1), , pp.29-33
Main Authors: Lee, Byoungho, Kim, Changmin, Lee, Youngmin, Lee, Sejoon, Kim, Deuk Young
Format: Article
Language:English
Subjects:
Bottom-contact
Devices
Illumination
Penetration depth
Photocurrent
Photoelectric effect
Platinum
Schottky diode
Schottky diodes
UV response
Wavelengths
Zinc oxide
물리학
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Summary:We fabricated the bottom-contacted ZnO/Pt Schottky diode and investigated the dependence of its photocurrent on the wavelength of illuminated ultraviolet (UV) light source. The bottom-contacted Schottky diode was devised by growing (000l) ZnO on (111) Pt, and the fabricated device showed a strong dependence on the UV wavelength for its photo-response characteristics. When longer-wavelength-UV (e.g., UV-A) was illuminated on the device, the photo-current was increased by a factor of 200, compared to that under illumination of shorter-wavelength-UV (e.g., UV-C). The behavior is attributed to the wavelength-dependent UV penetration depth for ZnO. •The bottom-contacted Schottky diode is devised by growing (000l) ZnO on (111) Pt.•The photo-response strongly depends on the wavelength of ultra-violet (UV) light.•Photo-current is considerably increased when illuminating longer-wavelength-UV.•The behavior results from the wavelength-dependent penetration depth of UV in ZnO.
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2014.10.024