Determination of the effective mass and nanoscale electrical transport in La-doped BaSnO3 thin films

Epitaxial La-doped BaSnO3 thin films were grown by radio-frequency (RF) magnetron sputtering technique on (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (001) substrates. The n-type degenerate semiconductor was demonstrated in the La-doped BaSnO3 thin film from Hall-effect measurement, and its electron effective ma...

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Bibliographic Details
Published in:Current applied physics 2016, 16(1), , pp.20-23
Main Authors: Luo, B.C., Cao, X.S., Jin, K.X., Chen, C.L.
Format: Article
Language:English
Subjects:
Carrier effective mass
Electrical properties
Thin film
물리학
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Summary:Epitaxial La-doped BaSnO3 thin films were grown by radio-frequency (RF) magnetron sputtering technique on (LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7 (001) substrates. The n-type degenerate semiconductor was demonstrated in the La-doped BaSnO3 thin film from Hall-effect measurement, and its electron effective mass ∼0.396m0 (m0, the free electron mass) was determined from combined Seebeck coefficient and carrier density. Additionally, the local current–voltage curve measured using conductive atomic force microscopy exhibits non-linear characteristic and the transport mechanism at high bias is found to be the Fowler-Nordheim tunneling. •Epitaxial La-doped BaSnO3 films were fabricated by RF magnetron sputtering.•Electron effective mass ∼0.396m0 was determined by electrical measurements only.•Fowler-Nordheim tunneling mechanism was observed in nanoscale electrical behavior.
ISSN:1567-1739
1878-1675
DOI:10.1016/j.cap.2015.10.006